ASI's Schottky Barrier Mixer and Detector Diodes are manufactured by the deposition of a suitable barrier
metal on an epitaxial silicon layer to form a junction. These diodes are designed for applications up to 40 GHz
for use in Waveguide, Coaxial and Stripline circuits.
Several barrier heights are available which include:
LOW BARRIER (N-TYPE) - for applications where the local oscillator drive level is between -10 dBm and +10 dBm.
MEDIUM BARRIER (N-TYPE) - for applications where the local oscillator drive level is between -5 dBm and +15 dBm.
HIGH BARRIER (N-TYPE) - for applications where the local oscillator drive is between 0 dBm and +20 dBm.
LOW BARRIER (P-TYPE) - for applications where low 1/f noise for use in Doppier Radar and Motion Detectors is required.
The Schottky Barrier Mixer Diodes are characterized by noise figure in four different frequency ranges: S, X, KIA- and Ka-Bands.
The Schottky Barrier Detector Diodes are characterized by Tangen-tial Signal Sensitivity (TSS) in four different frequency ranges:
S, X, KJ-t and Ka-Bands. In addition to being used in mixer and detector applications these Schottky Barrier Diodes can also be used
for modulators, high speed switches and low power limiters. All of the Schottky Barrier Mixer and Detector Diodes meet or ex-ceed the
Military Environmental Specifications of MIL-S-19500 and Methods from MIL-STD-750 and/or customer specifications.
Storage Temperature: -65 C to + 175 C
Operation Temperature: -65 C to +150 C
Incident RF CW Power: 100 mW max